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ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage MPSA42 IC = 10 mA, IB = 0 MPSA43 V(BR)CEO V(BR)CEO 300 200 – – – – V V Collector-Base Breakdown Voltage MPSA42 IC = 100 µA, IE = 0 MPSA43 V(BR)CBO V(BR)CBO 300 200 – – – – V V Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 V(BR)EBO 6– –V Collector-Base Cutoff Current VCB = 200 V, IE = 0 MPSA42 VCB = 160 V, IE = 0 MPSA43 ICBO ICBO – – – – 100 100 nA nA Emitter-Base Cutoff Current VEB = 6 V, IC = 0 MPSA42 VEB = 4 V, IC = 0 MPSA43 IEBO IEBO – – – – 100 100 nA nA DC Current Gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE hFE hFE 25 40 40 – – – – – – – – – Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2 mA VCEsat –– 500 mV Base-Emitter Saturation Voltage IC = 20 mA, IB = 2 mA VBEsat –– 900 mV Gain-Bandwidth Product IE = 10 mA, VCE = 20 V, f = 100 MHz fT 50 – – MHz Collector-Base Capacitance MPSA42 VCB = 20 V, IE = 0, f = 1 MHz MPSA43 CCBO CCBO – – – – 3 4 pF pF Thermal Resistance Junction to Ambient Air RthJA –– 2001) K/W 1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case. MPSA42, MPSA43 |
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