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SMAJ530 Datasheet(PDF) 2 Page - General Semiconductor |
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SMAJ530 Datasheet(HTML) 2 Page - General Semiconductor |
2 / 2 page 0 1.0 2.0 3.0 4.0 0 100 150 50 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms 0.1 1.0 10 100 0 50 100 150 0 25 50 75 100 25 75 125 175 1,000 10,000 MAXIMUM RATINGS AND CHARACTERISTIC CURVES SMAJ530 AND SMAJ550 FIG. 1 - PEAK PULSE POWER RATING CURVE td, PULSE WIDTH, sec. TA, AMBIENT TEMPERATURE, °C FIG. 3 - PULSE WAVEFORM t, TIME, ms NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG. 3 TA=25°C PULSE WIDTH (td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% of IPPM tr=10 µsec. td PEAK VALUE IPPM HALF VALUE - IPPM 2 10/1000 µsec. WAVEFORM as DEFINED by R.E.A. FIG. 2 - PULSE DERATING CURVE RECOMMENDED PAD LAYOUT The pad dimensions should be 0.010” (2.5mm) longer than the contact size in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for soldering methods. MODIFIED J-BEND 0.060 MIN (1.52 MIN) 0.050 MIN (1.27 MIN) 0.220 REF (5.58) 0.094 MAX (2.38 MAX) Dimensions in inches and (millimeters) • Respect Thermal Resistance (PCB Layout) - as the temperature coefficient also contributes to the clamping voltage. • Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature. Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power. • Clamping voltage is influenced by internal resistance - design approximation is 7V per 100mA slope. • Keep temperature of TVS lower than TOPSwitch® as a recommendation. • Maximum current is determined by the maximum TJ and can be higher than 300mA. Contact supplier for different clamping voltage / current arrangements. • Minimum breakdown voltage can be customized for other applications. Contact supplier. APPLICATION NOTES |
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Descripción similar - SMAJ530 |
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