STP46NF30 datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STP46NF30

Descripción Electrónicos	N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB46NF30, STP46NF30, STW46NF30

Electrical ratings

Doc ID 018493 Rev 1

3/19

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

300

V

VGS

Gate-source voltage

± 20

V

ID

Drain current (continuous) at TC = 25 °C

42

A

ID

Drain current (continuous) at TC = 100 °C

27

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

168

A

Ptot

Total dissipation at TC = 25 °C

300

W

Derating factor

2

W/°C

dv/dt (2)

2.

ISD ≤ 34 A, di/dt ≤200 A/µs, VDD ≤ 80% V(BR)DSS.

Peak diode recovery voltage slope

10

V/ns

Tstg

Storage temperature

-55 to 175

°C

Tj

Max. operating junction temperature

175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

30

62.5

50

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

30

°C/W

TJ

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (1)

1.

Pulse width limited by Tjmax

26

A

EAS

(2)

2.

Starting Tj = 25 °C, ID = IAR, VDD = 50 V

Single pulse avalanche energy

290

mJ

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