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BC847BPDW1T2G Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza BC847BPDW1T2G
Descripción Electrónicos  Dual General Purpose Transistors
Download  17 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC847BPDW1T2G Datasheet(HTML) 3 Page - ON Semiconductor

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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
−65
−45
−30
V
Collector−Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CES
−80
−50
−30
V
Collector−Base Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
−80
−50
−30
V
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
−5.0
−5.0
−5.0
V
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ICBO
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = −2.0 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
hFE
200
420
150
270
290
520
475
800
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
−0.3
−0.65
V
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
−0.7
−0.9
V
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−0.6
−0.75
−0.82
V
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB


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