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2SJ278 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SJ278 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 8 page 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Outline 4 3 2 1 UPAK 1. Gate 2. Drain 3. Source 4. Drain D G S |
Número de pieza similar - 2SJ278 |
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Descripción similar - 2SJ278 |
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