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2SJ350 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SJ350 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SJ350 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –120 V Gate to source voltage V GSS ±20 V Drain current I D –6 A Drain peak current I D(pulse)* 1 –12 A Body to drain diode reverse drain current I DR –6 A Channel dissipation Pch* 2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T C = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS –120 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –250 µAV DS = –100 V, VGS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V Static drain to source on state R DS(on) — 0.5 0.7 Ω I D = –4 A, VGS = –10 V* 1 resistance — 0.7 0.9 Ω I D = –4 A, VGS = –4 V* 1 Forward transfer admittance |y fs| 3.0 5.0 — S I D = –4 A, VDS = –10 V* 1 Input capacitance Ciss — 900 — pF V DS = –10 V, VGS = 0, Output capacitance Coss — 265 — pF f = 1 MHz Reverse transfer capacitance Crss — 65 — pF Turn-on delay time t d(on) — 11 — ns I D = –4 A, VGS = –10 V, Rise time t r — 45 — ns R L = 7.5 Ω Turn-off delay time t d(off) — 170 — ns Fall time t f —80 — ns Body to drain diode forward voltage V DF — –1.2 — V I F = –6 A, VGS = 0 Body to drain diode reverse recovery time t rr — 240 — ns I F = –6 A, VGS = 0, di F/dt = 50 A/µs Note: 1. Pulse test |
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