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2SJ350 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SJ350 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ350 3 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area DC Operation (Tc = 25 °C) 10 µs 100 µs 1 ms Operation in this area is limited by R DS(on) Ta = 25 °C PW = 10 ms (1shot) –20 –10 –2 –1 –5 –0.2 –0.5 –0.1 –2 –5 –10 –20 –50 –100 –200 –10 –8 –6 –4 –2 0 Drain to Source Voltage V (V) DS Typical Output Characteristics –4 –8 –12 –16 –20 –4 V –6 V –10 V –3 V Pulse Test V = –2.5 V GS –3.5 V –10 –8 –6 –4 –2 0 –1–2–3 –4 –5 Gate to Source Voltage V (V) GS Typical Transfer Characteristics 75 °C Tc = –25 °C 25 °C V = –10 V Pulse Test DS |
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