2SJ351 datasheet(3/8 Pages) HITACHI

No. de pieza	2SJ351

Descripción Electrónicos	Silicon P-Channel MOS FET

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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2SJ351, 2SJ352

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

2SJ351

V

(BR)DSX

–180

—

V

I

D = –10 mA, VGS = 10 V

breakdown voltage

2SJ352

–200

—

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100 µA, VDS = 0

Gate to source cutoff voltage

V

GS(off)

–0.15

—

–1.45

V

I

D = –100 mA, VDS = –10 V

Drain to source saturation

voltage

V

DS(sat)

—

–12

V

I

D = –8 A, VGD = 0*

1

Forward transfer admittance

|y

fs|

0.7

1.0

1.4

S

I

D = –3 A, VDS = –10 V*

1

Input capacitance

Ciss

—

800

—

pF

V

GS = 5 V, VDS = –10 V,

Output capacitance

Coss

—

1000

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

18

—

pF

Turn-on time

t

on

—

320

—

ns

V

DD = –30 V, ID = –4 A

Turn-off time

t

off

—

120

—

ns

Note:

1. Pulse test

Número de pieza similar - 2SJ351

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SJ351	70Kb / 6P	Silicon P Channel MOS FET
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Descripción similar - 2SJ351

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Hitachi Semiconductor	2SJ221	48Kb / 8P	Silicon P-Channel MOS FET
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Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
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	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
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	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
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2SJ351 Datasheet(PDF) 3 Page - Hitachi Semiconductor

2SJ351 Datasheet(HTML) 3 Page - Hitachi Semiconductor

Número de pieza similar - 2SJ351

Descripción similar - 2SJ351

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