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2SJ527S Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ527S Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SJ527(L),2SJ527(S) 4 –5 –4 –3 –2 –1 0 –4 –8 –12 –16 –20 10 1 –0.1 –0.3 –1 –3 –10 2.0 1.6 1.2 0.8 0.4 –40 0 40 80 120 160 0 3 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current Pulse Test Pulse Test I = –5 A D –1 A –2 A 0.1 0.3 –1 A I = –4 A D 10 1 –0.1 –0.2 –0.5 –1 –2 –5 –10 2 5 0.1 0.2 0.5 25 °C Tc = –25 °C 75 °C V = –10 V Pulse Test DS –30 V = –10 V GS –4 V Pulse Test –5 A –2 A V = –4 V GS –1, –2 A –10 V |
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