2SJ527S datasheet(4/9 Pages) HITACHI

No. de pieza	2SJ527S

Descripción Electrónicos	Silicon P Channel MOS FET High Speed Power Switching

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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4 / 9 page

2SJ527(L),2SJ527(S)

4

–5

–4

–3

–2

–1

0

–4

–8

–12

–16

–20

10

1

–0.1

–0.3

–1

–3

–10

2.0

1.6

1.2

0.8

0.4

–40

0

40

80

120

160

0

3

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature

Tc

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

Pulse Test

I

= –5 A

D

–1 A

–2 A

0.1

0.3

–1 A

I

= –4 A

D

10

1

–0.1 –0.2

–0.5

–1

–2

–5

–10

2

5

0.1

0.2

0.5

25 °C

Tc = –25 °C

75 °C

V

= –10 V

Pulse Test

DS

–30

V

= –10 V

GS

–4 V

Pulse Test

–5 A

–2 A

V

= –4 V

GS

–1, –2 A

–10 V

Número de pieza similar - 2SJ527S

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SJ527S	93Kb / 9P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ527S	45Kb / 1P	Hight Speed Power Switching
Renesas Technology Corp	2SJ527STL-E	93Kb / 9P	Silicon P Channel MOS FET
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Descripción similar - 2SJ527S

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2SJ527S Datasheet(PDF) 4 Page - Hitachi Semiconductor

2SJ527S Datasheet(HTML) 4 Page - Hitachi Semiconductor

Número de pieza similar - 2SJ527S

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