2SJ529S datasheet(4/9 Pages) HITACHI

No. de pieza	2SJ529S

Descripción Electrónicos	Silicon P Channel MOS FET High Speed Power Switching

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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4 / 9 page

2SJ529(L),2SJ529(S)

4

–1.0

–0.8

–0.6

–0.4

–0.2

0

–4

–8

–12

–16

–20

0.5

0.4

0.3

0.2

0.1

–40

0

40

80

120

160

0

–10 V

I

= –5 A

D

GS

V

= –4 V

–0.1

–1

–10

0.1

10

20

5

1

0.5

–0.2

–0.5

–2

–5

1

0.5

0.05

0.02

0.01

–0.1

–0.3

–1

–3

–10

–30

–100

–1, –2 A

I

= –5 A

D

–2 A

–1 A

0.2

0.1

–10 V

V

= –4 V

GS

–1 A

–2 A

–5 A

2

75

°C

25

°C

Ta = –25

°C

Pulse Test

V

= –10 V

DS

Pulse Test

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

Número de pieza similar - 2SJ529S

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	2SJ529S	94Kb / 9P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ529S	45Kb / 1P	Hight Speed Power Switching
Inchange Semiconductor ...	2SJ529S	324Kb / 2P	isc P-Channel MOSFET Transistor
VBsemi Electronics Co.,...	2SJ529S	988Kb / 8P	P-Channel 60-V (D-S) MOSFET
Renesas Technology Corp	2SJ529STL-E	94Kb / 9P	Silicon P Channel MOS FET

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Descripción similar - 2SJ529S

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2SJ529S Datasheet(PDF) 4 Page - Hitachi Semiconductor

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Número de pieza similar - 2SJ529S

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