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2SK1170 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK1170 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK1169, 2SK1170 5 10 8 4 2 0 4 8 12 16 20 6 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 10 A ID = 5 A 20 A 5 2 1.0 0.5 0.05 1 2 5 20 50 100 Drain Current ID (A) 0.1 0.2 Pulse Test 10 VGS = 10 V 15 V Static Drain to Source on State Resistance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Case Temperature TC (°C) –40 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 10 A ID = 20 A 5 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 0.5 0.2 0.5 1.0 5 10 20 Drain Current ID (A) 1.0 2 2 75°C TC = 25°C VDS = 20 V Pulse Test –25°C |
Número de pieza similar - 2SK1170 |
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Descripción similar - 2SK1170 |
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