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2SK1948 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK1948 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page 2SK1948 4 Power vs. Temperature Derating 300 200 100 0 50 100 150 Case Temperature Tc (°C) Maximum Safe Operation Area Drain to Source Voltage V (V) 1 3 10 100 DS 1000 300 30 300 1000 100 30 10 1 0.3 0.1 Operation in this area in limited by R (on) DS 10 s 100 s 1 ms DC Operation (Tc = 25°C) µ µ PW = 10 ms (1 Shot) 3 Ta = 25°C Typical Output Characteristics Drain to Source Voltage V (V) DS 04 8 12 16 20 20 40 60 80 100 4 V 8 V V = 3.5 V GS Pulse Test 5.5 V 6 V 10 V 5 V Typical Transfer Characteristics 24 6 8 10 Gate to Source Voltage V (V) GS 10 20 30 40 50 Pulse Test V = 10 V DS 0 Tc = 25°C –25°C 75°C |
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