2SK2529 datasheet(7/10 Pages) HITACHI

No. de pieza	2SK2529

Descripción Electrónicos	Silicon N-Channel MOS FET

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

Página de inicio	http://www.renesas.com/eng

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7 / 10 page

2SK2529

7

100

80

60

40

20

0

0.4

0.8

1.2

1.6

2.0

Source to Drain Voltage

V

(V)

SD

Pulse Test

Reverse Drain Current vs.

Source to Drain Voltage

V

= 0, –5 V

GS

10 V

5 V

200

160

120

80

40

Channel Temperature Tch (°C)

Maximun Avalanche Energy vs.

Channel Temperature Derating

25

50

75

100

125

150

0

I

= 45 A

V

= 25 V

duty < 0.1 %

Rg > 50

AP

DD

Ω

3

1

0.3

0.1

0.03

0.01

10 µ

100 µ

1 m

10 m

Pulse Width

PW (S)

100 m

1

10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) •

ch – c

ch – c = 3.57 °C/W, Tc = 25 °C

θ

γ

θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

Normalized Transient Thermal Impedance vs. Pulse Width

Número de pieza similar - 2SK2529

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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Descripción similar - 2SK2529

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2SK2529 Datasheet(PDF) 7 Page - Hitachi Semiconductor

2SK2529 Datasheet(HTML) 7 Page - Hitachi Semiconductor

Número de pieza similar - 2SK2529

Descripción similar - 2SK2529

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