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2SK2925S Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK2925S Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page 2SK2925(L),2SK2925(S) 4 Main Characteristics 40 30 20 10 0 50 100 150 200 1000 300 100 30 3 10 0.1 0.3 1 3 10 30 100 20 16 12 8 4 0 2 468 10 20 16 12 8 4 0 24 68 10 0.3 0.1 1 10 µs 1 ms PW = 10 ms (1shot) Ta = 25°C 100 µs 10 V Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) DC Operation (Tc = 25°C) 6 V 5 V 4 V 3 V V = 2.5 V GS Pulse Test Tc = –25°C 25°C V = 10 V Pulse Test DS 75°C |
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