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2SK3207 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK3207 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SK3207 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 150 V Gate to source voltage V GSS ±20 V Drain current I D 18 A Drain peak current I D(pulse)* 1 72 A Body-drain diode reverse drain current I DR 18 A Avalanche current I AP* 3 18 A Avalanche energy E AR* 3 24 mJ Channel dissipation Pch* 2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50Ω |
Número de pieza similar - 2SK3207 |
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Descripción similar - 2SK3207 |
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