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2SK3288 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SK3288 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SK3288 4 2.0 1.6 1.2 0.8 0.4 0 24 6 8 10 0.1 0.5 0.2 50 20 10 2 5 1.0 0.5 10 8 6 4 2 –40 0 40 80 120 160 0 1.0 I = 100mA D 50m A Pulse Test Pulse Test V = 4V GS 10 V Pulse Test I = 100m A D V = 4 V GS 10 V Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current 10m A 10mA 10mA,50mA,100m A 50mA 0.01 0.02 0.05 0.1 0.5 0.2 0.1 0.02 0.05 0.01 0.005 V = 10 V Pulse Test DS Tc = –25 °C 25 °C 75 °C |
Número de pieza similar - 2SK3288 |
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Descripción similar - 2SK3288 |
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