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| HA17301P |
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HITACHI |
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HA17301P 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Power-supply voltage V CC 28 V Noninverting input current Ir 5 mA Sink current Io sink 50 mA Source current Io source 50 mA Allowable power dissipation* P T 625 mW Operating temperature Topr –20 to +75 °C Storage temperature Tstg –55 to +125 °C Note: This is the allowable value up to Ta = 50 °C for the HA17301P. Derate by 8.3 mW/°C above that temperature. Electrical Characteristics (V CC = +15 V, RL = 5.0 kΩ, Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Voltage gain A VD 1,000 1,400 — V/V Supply current I CO — 7.7 10 mA Non inverting input open I CG — 8.3 14 mA Non inverting input grounded Input bias current I IB — 80 300 nA R L = ∞ Current mirror gain A I 0.80 0.94 1.16 A/A Ir = 200 µA Output source current Io source 3 13 — mA V OH = 0.4 V — 10 — mA V OH = 9.0 V Output sink current Io sink 0.5 0.75 — mA V OL = 0.4 V Output voltage V OH 13.5 13.9 — V V OL(inv) — 0.04 0.1 V Inverting input driven V OL(non) — 0.55 — V Non inverting input driven Input resistance Rin 0.1 1.0 — M Ω Inverting input only Slew rate SR — 0.2 — V/ µsC L = 100 pF, RL = 5.0 kΩ Bandwidth BW — 2.6 — MHz A VD = 1 Phase margin φm — 87 — deg Power-supply rejection ratio PSRR — 63 — dB f = 100 Hz Channel separation CS — 63 — dB f = 1.0 kHz |
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