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NE33284A-T1A Datasheet(PDF) 2 Page - NEC |
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NE33284A-T1A Datasheet(HTML) 2 Page - NEC |
2 / 10 page NE33284A 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Gate to Source Leak Current IGSO 0.5 10 µAVGS = –3 V Saturated Drain Current IDSS 15 40 80 mA VDS = 2 V, VGS = 0 Gate to Source Cutoff Voltage VGS(off) –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA Transconductance gm 45 70 mS VDS = 2 V, ID = 10 mA Noise Figure NF 0.75 1.0 dB f = 12 GHz VDS = 2 V 0.35 0.45 f = 4 GHz ID = 10 mA Associated Gain Ga 9.5 10.5 dB f = 12 GHz 13.0 15.0 f = 4 GHz PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with AlGaAs shottky barrier gate. |
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