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IRF640NSRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF640NSRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  HEXFET® Power MOSFET 10/08/04 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 72 PD @TC = 25°C Power Dissipation 150 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 247 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt 8.1 V/ns TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Description VDSS = 200V RDS(on) = 0.15Ω ID = 18A S D G l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements D2Pak IRF640NS TO-220AB IRF640N TO-262 IRF640NL IRF640N IRF640NS IRF640NL Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for low- profile application. www.irf.com 1 PD - 94006A |
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