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ESD3B5V0WS Datasheet(PDF) 1 Page - Diotec Semiconductor |
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ESD3B5V0WS Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page ESD3B5V0WS, ESD3B24WS ESD3B5V0WS, ESD3B24WS Bi-Directional Transient Voltage Suppressor Diodes for ESD Protection Bidirektionale Spannungs-Begrenzer-Dioden für ESD-Schutzschaltungen Version 2014-11-04 Dimensions - Maße [mm] Peak pulse power dissipation Maximale Verlustleistung 350 W Nominal stand-off voltage Nominale Sperrspannung 5.0 ... 24 V Plastic case Kunststoffgehäuse ~ SOD-323 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings and Characteristics Grenz- und Kennwerte ESD3Z-series Peak pulse power dissipation (8/20 µs waveform) Impuls-Verlustleistung (Strom-Impuls 8/20 µs) TA = 25°C PPPM 350 W 1) ESD immunity (HBM, air discharge, IEC 61000-4-2) ESD-Festigkeit (HBM, Luftentladung, IEC 61000-4-2) VPP 30 kV Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz ESD3B5V0WS ESD3B12WS ESD3B15WS ESD3B24WS CT CT CT CT 200 pF 100 pF 75 pF 50 pF Junction temperature − Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+125°C -50...+150°C Marking – Stempelung ESD3B5V0WS ESD3B12WS ESD3B15WS ESD3B24WS Type Typ Stand-off voltage Sperrspannung Max. rev. current Max. Sperrstrom at / bei VWM Breakdown voltage Abbruch-Spannung at / bei IT = 1 mA Max. clamping voltage Max. Begrenzer-Spannung at / bei IPPM (8/20 µs) VWM [V] ID [µA] VBR min [V] VC [V] IPPM [A] VC [V] IPPM [A] ESD3B5V0WS 5.0 10 6 9.8 5 14.5 24 ESD3B12WS 12 1 13.3 19 5 24 15 ESD3B15WS 15 1 16.7 24 5 29 12 ESD3B24WS 24 1 26.7 40 5 44 8 1 Non-repetitive pulse see curve I PP = f (t) / PPP = f (t) Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I PP = f (t) / PPP = f (t) © Diotec Semiconductor AG http://www.diotec.com/ 1 2.5±0.2 Type Code 1.7±0.1 |
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