STB40N60M2 datasheet(1/21 Pages) STMICROELECTRONICS

No. de pieza	STB40N60M2

Descripción Electrónicos	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

May 2014

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STB40N60M2, STP40N60M2,

STW40N60M2

N-channel 600 V, 0.078

Ω typ., 34 A MDmesh II Plus™ low Q

g

Power MOSFETs in D

2

PAK, TO-220 and TO-247 packages

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

g

. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM01476v1

D2PAK

TO-220

TO-247

1

3

2

TAB

1

2

3

TAB

1

2

3

Order codes

VDS @ TJmax

RDS(on) max

ID

STB40N60M2

650 V

0.088

Ω

34 A

STP40N60M2

STW40N60M2

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB40N60M2

40N60M2

D

2

PAK

Tape and reel

STP40N60M2

TO-220

Tube

STW40N60M2

TO-247

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