STI33N60M2 datasheet(4/20 Pages) STMICROELECTRONICS

No. de pieza	STI33N60M2

Descripción Electrónicos	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

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Electrical characteristics

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2

4/19

DocID024298 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 13 A

0.108

0.125

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1781

-

pF

Coss

Output capacitance

-

85

-

pF

Crss

Reverse transfer

capacitance

-2.5

-

pF

Coss eq.

(1)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0

-

135

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

5.2

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 26 A,

VGS = 10 V

(see Figure 19)

-

45.5

-

nC

Qgs

Gate-source charge

-

9.9

-

nC

Qgd

Gate-drain charge

-

18.5

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 13 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18 and

Figure 23)

-16

-

ns

tr(v)

Voltage rise time

-

9.6

-

ns

td(off)

Turn-off-delay time

-

109

-

ns

tf(i)

Fall time

-

9

-

ns

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