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IRF6665TRPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF6665TRPBF
Descripción Electrónicos  Latest MOSFET Silicon technology
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6665TRPBF Datasheet(HTML) 1 Page - International Rectifier

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1
08/25/06
IRF6665PbF
IRF6665TRPbF
Notes
 through Š are on page 2
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
DIGITAL AUDIO MOSFET
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
PD @TA = 25°C
Power Dissipation
e
PD @TA = 70°C
Power Dissipation
e
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
ek
–––
58
°C/W
RθJA
Junction-to-Ambient
hk
12.5
–––
RθJA
Junction-to-Ambient
ik
20
–––
RθJC
Junction-to-Case
jk
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.4
–––
42
Max.
4.2
3.4
34
100
± 20
19
-40 to + 150
0.017
2.2
1.4
VDS
100
V
RDS(on) typ. @ VGS = 10V
53
m
:
Qg typ.
8.7
nC
RG(int) typ.
1.9
Key Parameters
SQ
SX
ST
SH
MQ
MX
MT
MN
DirectFET
™ ISOMETRIC
SH
PD - 97230A


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