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2SC3720_2014 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3720_2014 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 2 page Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ Website:www.jmnic.com |
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