Features

• High Surge Capability

DO-4 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N1199A(R) 1N1200A(R)

1N1204A(R) 1N1206A(R)

Unit

Repetitive peak reverse

voltage

50

100

400

600

V

RMS reverse voltage

35

70

280

420

V

2. Reverse polarity (R): Stud is anode.

Conditions

1N1199A thru 1N1206AR

200

140

1N1202A(R)

Silicon Standard

Recovery Diode

DC blocking voltage

50

100

400

600

V

Continuous forward current

12

12

12

12

A

Operating temperature

-55 to 150 -55 to 150

-55 to 150 -55 to 150

°C

Storage temperature

-55 to 150 -55 to 150

-55 to 150 -55 to 150

°C

Parameter

Symbol

1N1199A(R) 1N1200A(R)

1N1204A(R) 1N1206A(R)

Unit

Diode forward voltage

1.1

1.1

1.1

1.1

10

10

10

10

μA

15

15

15

15

mA

Thermal characteristics

Thermal resistance, junction -

case

2.00

2.00

2.00

2.00

°C/W

V

15

1N1202A(R)

2.00

1.1

Conditions

240

240

-55 to 150

12

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

10

200

A

Reverse current

240

240

240

-55 to 150

Surge non-repetitive forward

current, Half Sine Wave

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1