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2SD2222_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD2222_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD2222 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=30mA ;IB=0 160 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 3.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 μA ICEO Collector cut-off current VCE=160V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 1000 hFE-2 DC current gain IC=7A ; VCE=5V 3500 20000 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 2.0 μs ts Storage time 6.0 μs tf Fall time IC=7A ;IB1=-IB2=7mA VCC=50V 1.2 μs hFE-2 classifications Q P 3500-10000 7000-20000 |
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