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SI6963DQ Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI6963DQ
Descripción Electrónicos  Dual P-Channel 2.5-V (G-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI6963DQ Datasheet(HTML) 1 Page - Vishay Siliconix

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Si6963DQ
Vishay Siliconix
New Product
Document Number: 71812
S-20220—Rev. D, 01-Apr-02
www.vishay.com
1
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
20
0.050 @ VGS = - 4.5 V
- 3.5
-20
0.085 @ VGS = - 2.5 V
- 2.7
Si6963DQ
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
TSSOP-8
Top View
D
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
"12
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
- 3.5
- 3.0
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
- 2.8
- 2.5
A
Pulsed Drain Current
IDM
-30
A
Continuous Source Current (Diode Conduction)a
IS
- 1.25
- 0.7
Maximum Power Dissipationa
TA = 25_C
PD
1.14
0.83
W
Maximum Power Dissipationa
TA = 70_C
PD
0.73
0.53
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
86
110
Maximum Junction-to-Ambienta
Steady State
RthJA
124
150
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
52
165
Notes
a.
Surface Mounted on FR4 Board.


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