Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI6967DQ-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI6967DQ-T1-E3
Descripción Electrónicos  Dual P-Channel 1.8-V (G-S) MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6967DQ-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

  SI6967DQ-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 7Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 8Page - Vishay Siliconix SI6967DQ-T1-E3 Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
www.vishay.com
2
Document Number: 70811
S-81221-Rev. D, 02-Jun-08
Vishay Siliconix
Si6967DQ
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 6.4 V, VGS = 0 V
- 1
µA
VDS = - 6.4 V, VGS = 0 V, TJ = 70 °C
- 25
On-State Drain Currenta
ID(on)
VDS ≥ - 8 V, VGS = - 4.5 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 5.0 A
0.024
0.030
Ω
VGS = - 2.5 V, ID = - 4.0 A
0.033
0.045
VGS = - 1.8 V, ID = - 3.0 A
0.048
0.070
Forward Transconductancea
gfs
VDS = - 8 V, ID = - 5.0 A
18
S
Diode Forward Voltagea
VSD
IS = - 1.25 A, VGS = 0 V
- 0.68
- 1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.0 A
20
40
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
3.6
Turn-On Delay Time
td(on)
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
20
50
ns
Rise Time
tr
30
60
Turn-Off Delay Time
td(off)
85
150
Fall Time
tf
50
90
Source-Drain Reverse Recovery Time
trr
IF = - 1.25 A, dI/dt = 100 A/µs
50
100


Número de pieza similar - SI6967DQ-T1-E3

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI6967DQ VISHAY-SI6967DQ Datasheet
53Kb / 4P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. C, 12-Oct-98
SI6967DQ VISHAY-SI6967DQ Datasheet
100Kb / 5P
   Dual P-Channel 1.8-V (G-S) MOSFET
01-Jan-2022
SI6967DQ VISHAY-SI6967DQ_V01 Datasheet
100Kb / 5P
   Dual P-Channel 1.8-V (G-S) MOSFET
01-Jan-2022
More results

Descripción similar - SI6967DQ-T1-E3

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI6973DQ VISHAY-SI6973DQ Datasheet
66Kb / 4P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. A, 22-May-00
SI4965DY VISHAY-SI4965DY Datasheet
62Kb / 4P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. B, 13-Oct-03
SI4967DY VISHAY-SI4967DY Datasheet
62Kb / 4P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. C, 13-Oct-03
SI5935DC VISHAY-SI5935DC Datasheet
73Kb / 5P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. A, 16-Jun-03
SI5935DC-T1-E3 VISHAY-SI5935DC-T1-E3 Datasheet
233Kb / 10P
   Dual P-Channel 1.8 V (G-S) MOSFET
Rev. C, 19-Apr-10
logo
Guangdong Kexin Industr...
KI5935DC KEXIN-KI5935DC Datasheet
66Kb / 2P
   Dual P-Channel 1.8-V (G-S) MOSFET
logo
Vishay Siliconix
SI4967DY VISHAY-SI4967DY_V01 Datasheet
103Kb / 5P
   Dual P-Channel 1.8-V (G-S) MOSFET
01-Jan-2022
SI5905DC VISHAY-SI5905DC_V01 Datasheet
112Kb / 5P
   Dual P-Channel 1.8 V (G-S) MOSFET
SI1905DL VISHAY-SI1905DL Datasheet
57Kb / 4P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. A, 01-Nov-99
SI1907DL VISHAY-SI1907DL Datasheet
202Kb / 3P
   Dual P-Channel 1.8-V (G-S) MOSFET
Rev. B, 28-Feb-05
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com