BF904_2015 datasheet(7/14 Pages) JMNIC

No. de pieza	BF904_2015

Descripción Electrónicos	N-channel dual gate MOS-FETs

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Fabricante Electrónico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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NXP Semiconductors

Product speciﬁcation

N-channel dual gate MOS-FETs

BF904; BF904R

Fig.12 Drain current as a function of gate 1

supply voltage (= VGG); typical values;

see Fig.20.

VDS = 5 V; VG2-S =4V.

RG1 = 120 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

0

12

8

4

0

15

MLD275

23

4

I D

(mA)

V

(V)

GG

Fig.13 Drain current as a function of gate 1

(= VGG) and drain supply voltage;

typical values; see Fig.20.

VG2-S =4V.

RG1 connected to VGG; Tj =25 °C.

handbook, halfpage

0

20

10

15

5

0

24

8

MLD274

6

V

= V

(V)

GG

DS

I D

(mA)

R

= 47 k

Ω

G1

68 k

Ω

82 k

Ω

100 k

Ω

120 k

Ω

150 k

Ω

180 k

Ω

220 k

Ω

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG).

Fig.14 Drain current as a function of gate 2 voltage;

typical values; see Fig.20.

handbook, halfpage

024

6

12

0

MLD276

8

4

I D

(mA)

4.5 V

4 V

3.5 V

3 V

V

(V)

G2 S

V

= 5 V

GG

Fig.15 Gate 1 current as a function of gate 2

voltage; typical values; see Fig.20.

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG).

handbook, halfpage

02

46

40

30

10

0

20

MLB945

I G1

(

µA)

V

(V)

G2 S

4.5 V

4 V

3.5 V

3 V

V

= 5 V

GG

Rev. 06 - 13 November 2007

7 of 14

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BF904_2015 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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