BF1102_2015 datasheet(10/16 Pages) JMNIC

No. de pieza	BF1102_2015

Descripción Electrónicos	Dual N-channel dual gate MOS-FETs

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Fabricante Electrónico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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10 / 16 page

2000 Apr 11

10

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual gate MOS-FETs

BF1102; BF1102R

Table 1

Scattering parameters: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C

Table 2

Noise data: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C

f

(MHz)

s11

s21

s12

s22

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

ANGLE

(deg)

50

0.987

−5.6

4.069

173.5

0.001

95.4

0.986

−3.0

100

0.981

−11.1

4.042

167.0

0.002

81.3

0.983

−6.0

200

0.961

−21.9

3.926

154.4

0.005

75.8

0.976

−12.0

300

0.933

−32.1

3.778

142.4

0.006

69.6

0.960

−17.7

400

0.899

−42.0

3.593

130.6

0.007

65.6

0.945

−23.2

500

0.867

−51.1

3.412

119.6

0.007

64.4

0.928

−29.1

600

0.834

−59.9

3.216

109.2

0.007

67.5

0.914

−34.1

700

0.805

−67.9

3.010

99.0

0.006

78.7

0.901

−39.8

800

0.779

−75.7

2.804

89.2

0.007

92.7

0.886

−45.1

900

0.758

−82.1

2.656

80.3

0.007

120.7

0.889

−49.7

1000

0.740

−89.0

2.509

69.9

0.009

125.5

0.890

−55.7

f

(MHz)

Fmin

(dB)

Γopt

Rn

(

Ω)

(ratio)

(deg)

800

2

0.621

61.61

25.85

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BF1102_2015 Datasheet(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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