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BF1102_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1102_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 16 page 2000 Apr 11 3 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per MOS-FET unless otherwise specified VDS drain-source voltage − 7V ID drain current (DC) − 40 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 102 °C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 240 K/W handbook, halfpage 0 50 100 200 250 0 200 MGS359 150 150 100 50 Ts (°C) Ptot (mW) Fig.2 Power derating curve. |
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