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BF1206F_2015 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No. de pieza BF1206F_2015
Descripción Electrónicos  Dual N-channel dual gate MOSFET
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Fabricante Electrónico  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
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BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
4 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
7.
Static characteristics
[1]
RG1 connects gate 1 to VGG = 2.8 V.
8.
Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 7:
Static characteristics
Tj =25 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S =0V; ID =10 µA
amplifier A
6
-
-
V
amplifier B
6
-
-
V
V(BR)G1-SS
gate1-source breakdown voltage
VGS =VDS =0V; IG1-S =10mA
6
-
10
V
V(BR)G2-SS
gate2-source breakdown voltage
VGS =VDS =0V; IG2-S =10mA
6
-
10
V
VF(S-G1)
forward source-gate1 voltage
VG2-S =VDS =0V; IS-G1 = 10 mA
0.5
-
1.5
V
VF(S-G2)
forward source-gate2 voltage
VG1-S =VDS =0V; IS-G2 = 10 mA
0.5
-
1.5
V
VG1-S(th)
gate1-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 µA
0.3
-
1.0
V
VG2-S(th)
gate2-source threshold voltage
VDS =5V; VG1-S =5V; ID = 100 µA
0.35 -
1.0
V
IDSX
drain cut-off current
VG2-S = 2.5 V; VDS = 2.8 V
[1]
amplifier A; RG1 = 270 kΩ
3
-
6.5
mA
amplifier B; RG1 = 220 kΩ
3
-
6.5
mA
IG1-S
gate1 cut-off current
VG1-S =5V; VG2-S =VDS =0V
amplifier A
-
-
50
nA
amplifier B
-
-
50
nA
IG2-S
gate2 cut-off current
VG2-S =5V; VG1-S =VDS =0V;
-
-
20
nA
Table 8:
Dynamic characteristics for amplifier A
Common source; Tamb =25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
|yfs|
forward transfer admittance
Tj =25 °C17
22
32
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
[1] -
2.4
2.9
pF
Ciss(G2)
input capacitance at gate2
f = 100 MHz
[1] -
3.2
-
pF
Coss
output capacitance
f = 100 MHz
[1] -
1.1
-
pF
Crss
reverse transfer capacitance
f = 100 MHz
[1] -15
30
fF
Gtr
transducer power gain
BS =BS(opt); BL =BL(opt)
[1]
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
-
31
-
dB
f = 400 MHz; GS = 2 mS; GL =1mS
-
28
-
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
-
23
-
dB
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
-
3.5
-
dB
f = 400 MHz; YS = YS(opt)
-
1.0
1.6
dB
f = 800 MHz; YS = YS(opt)
-
1.1
1.7
dB


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