UPA1478 datasheet(2/6 Pages) NEC | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

2 page

µPA1478

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Leakage Current

ICBO

µA

VCB = 20 V, IE = 0

Emitter Leakage Current

IEBO

VEB = 5 V, IC = 0

Collector to Emitter

VCEO(SUS)

IC = 1 A,

Sustaining Voltage

L = 3 mH

DC Current Gain

hFE1

1000

—

VCE = 2 V, IC = 0.5 A

DC Current Gain

hFE2

2000

30000

—

VCE = 2 V, IC = 1 A

Collector Saturation Voltage

VCE(sat)

1.5

IC = 1 A, IB = 1 mA

Base Saturation Voltage

VBE(sat)

IC = 1 A, IB = 1 mA

Turn On Time

ton

0.5

µs

Storage Time

tstg

µs

Fall Time

µs

* PW

≤ 350

µs, Duty Cycle ≤ 2 % / pulsed

SWITCHING TIME TEST CIRCUIT

IB2

VIN

PW = 50

Duty Cycle

≤ 2 %

VBB = –5 V

IB1

T.U.T.

RL = 20

Ω

VCC = 20 V

Base Current

Wave Form

Collector

Current

Wave Form

IB1

IB2

10 %

90 %

ton

tstg

IC = 1 A

IB1 = –IB2 = 1 mA

VCC = 20 V, RL = 20

Ω

See test circuit

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

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