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FDD20AN06_F085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD20AN06_F085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2010 Fairchild Semiconductor Corporation FDD20AN06A0_F085 Rev. B1 FDD20AN06A0 F085 _ N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ Features • rDS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A • Qg(tot) = 15nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82547 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current 45 A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 100 oC, V GS = 10V) 32 A Continuous (Tamb = 25 oC, V GS = 10V, RθJA = 52 oC/W) 8 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy ( Note 1) 50 mJ PD Power dissipation 90 W Derate above 25oC 0.60 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 1.67 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W D G S TO-252AA FDD SERIES GATE SOURCE (FLANGE) DRAIN May 2010 A D F R E E I • RoHS Compliant |
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