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SI2300DS-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2300DS-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 65701 S10-0111-Rev. A, 18-Jan-10 Vishay Siliconix Si2300DS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 150 °C VSD - Source-to-Drain Voltage (V) TJ = 25 °C 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 01 2 3 45 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 2.9 A 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient TA = 25 °C Single Pulse 100 ms 10 s, DC Limited byRDS(on)* BVDSS Limited 1ms 100 µs 1s 10 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 |
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