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2SA1162 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SA1162
Descripción Electrónicos  PNP Transistors
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1162 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1162_15 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SA1162_15 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1162
Features
High voltage and high current
High hFE: hFE = 70~400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2712
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-50
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-150
Base Current
IB
-30
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
125
Storage Temperature range
Tstg
-55 to 125
V
mA
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-50
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -50 V , IE=0
-100
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-100
Collector-emitter saturation voltage
VCE(sat) IC=-100 mA, IB=-10mA
-0.3
Base - emitter saturation voltage
VBE(sat) IC=-100 mA, IB=-10mA
-1.2
DC current gain
hFE
VCE= -6V, IC= -2mA
70
400
Noise figure
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
10
dB
Collector output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
7
pF
Transition frequency
fT
VCE= -10V, IC= -1mA
80
MHz
V
V
nA
Classification of hfe
Type
2SA1162-O
2SA1162-Y
2SA1162-G
Range
70-140
120-240
200-400
Marking
SO
SY
SG
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02


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