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| UPA802T |
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 NEC
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2 page 
µPA802T 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 0.8 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.8 µA DC Current Gain hFE VCE = 3 V, IC = 7 mANote 1 70 240 Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 1 GHz 4.5 7.0 GHz Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHzNote 2 0.9 pF Insertion Power Gain |S21|2 VCE = 3 V, IC = 7 mA, f = 1 GHz 10 12 dB Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.4 1.7 dB hFE Ratio hFE1/hFE2 VCE = 3 V, IC = 7 mA 0.85 A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank FB GB Marking R34 R35 hFE Value 70 to 150 110 to 240 TYPICAL CHARACTERISTICS (TA = 25 °C) 5 0 10 0.5 0.5 1.0 10 15 20 0 0.5 1.0 10 20 1 5 10 50 20 50 100 200 VCE = 3 V VCE = 3 V 25 PT - TA Characteristics 100 0 50 100 150 200 Ambient Temperature TA (°C) Free Air 2 Elements in Total Per Element Base to Emitter Voltage VBE (V) IC - VBE Characteristics Collector to Emitter Voltage VCE (V) Collector Current IC (mA) hFE - IC Characteristics IC - VCE Characteristics 160 A µ 140 A µ 120 A µ 100 A µ 80 A µ 60 A µ 40 A µ IB = 20 A µ |
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