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| UPA807T |
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 NEC
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2 page 
µPA807T 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1 µA DC Current Gain hFE VCE = 2 V, IC = 7 mANote 1 70 140 Gain Bandwidth Product (1) fT VCE = 2 V, IC = 7 mA, f = 2 GHz 10 13 GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 8.5 12 GHz Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHzNote 2 0.4 0.6 pF Insertion Power Gain (1) |S21e|2 VCE = 2 V, IC = 7 mA, f = 2 GHz 7.5 9 dB Insertion Power Gain (2) |S21e|2 VCE = 1 V, IC = 5 mA, f = 2 GHz 7 8.5 dB Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz 1.5 2 dB Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 2 dB hFE Ratio hFE1/hFE2 VCE = 2 V, IC = 7 mA 0.85 A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking T84 hFE Value 70 to 140 TYPICAL CHARACTERISTICS (TA = 25 °C) Ambient Temperature TA (°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 200 0 50 100 150 50 40 30 20 10 0 0.5 1.0 25 20 15 10 5 0 1.0 2.0 3.0 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A VCE = 2 V 30 mW 60 mW 2 Elements in Total Per Element µ µ µ µ µ µ µ µ µ µ DC CURRENT GAIN vs. COLLECTOR CURRENT 500 200 100 50 20 10 1 2 5 10 20 50 100 VCE = 2 V VCE = 1 V Collector Current IC (mA) |
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