2SD1802_15 datasheet(1/2 Pages) KEXIN

No. de pieza	2SD1802

Descripción Electrónicos	NPN Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SD1802

■

Features

●

Low Collector-to-Emitter Saturation Voltage

●

Fast Switching Speed

●

Large Current Capacity and Wide ASO

●

Complementary to 2SB1202

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

50

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

3

A

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

50

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

1

Collector-emitter saturation voltage

VCE(sat) IC=2 A, IB=100mA

0.5

Base - emitter saturation voltage

VBE(sat) IC=2 A, IB=100mA

1.2

hFE(1)

VCE= 2V, IC= 100mA

100

560

hFE(2)

VCE= 2V, IC= 3 A

35

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

25

pF

Transition frequency

fT

VCE= 10V, IC= 50mA

150

MHz

DC current gain

V

uA

■

Classification of hfe(1)

Type

2SD1802-R

2SD1802-S

2SD1802-T

2SD1802-U

Range

100-200

140-280

200-400

280-560

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