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2SA1015-L Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SA1015-L
Descripción Electrónicos  PNP Transistors
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1015-L Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1015-L Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SA1015-L Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
Features
High voltage and high current
VCEO:=-50V(min.),IC=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
Absolute Maximum Ratings Ta = 25
ti
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CBO
-50
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CEO
-50
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EBO
-5
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-150
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200
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150
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stg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
Ic= -100 A, IE=0
-50
V
Collector-emitter breakdown voltage
VCEO
Ic= -0.1mA, IB=0
-50
V
Emitter-base breakdown voltage
VEBO
IE= -100 A, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V , IE
1
.
0
-
0
=
A
Collector cut-off current
ICEO
VCE= -50V , IB
1
.
0
-
0
=
A
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EBO
VEB=- 5V , IC
1
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0
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=
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FE
VCE=-6V, IC= -2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=-100 mA, IB
V
3
.
0
-
A
m
0
1
-
=
Base-emitter saturation voltage
VBE(sat)
IC=-100 mA, IB
V
1
.
1
-
A
m
0
1
-
=
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VCE=-10V, IC= -1mA,f=30MHz
80
MHz
hFE Classification
2SA1015
PNP Transistors
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
1. Base
2. Emitter
3. Collector
0.15 +0.02
-0.02
Type
2SA1015-L
2SA1015-H
Range
130-200
200-400
Marking
BAL
BA


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