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FSTYC9055R Datasheet(PDF) 3 Page - Intersil Corporation |
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FSTYC9055R Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 8 page 3 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = 64A -0.6 - -1.8 V Reverse Recovery Time trr ISD = 64A, dISD/dt = 100A/µs - - 120 ns Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA -60 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -48V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 64A - -1.60 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 41A - 0.023 Ω NOTES: 1. Pulse test, 300 µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS. Single Event Effects (SEB, SEGR) Note 4 TEST SYMBOL ENVIRONMENT (NOTE 5) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE ( µ) Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -60 Br 37 36 10 -60 Br 37 36 15 -36 Br 37 36 20 -24 NOTES: 4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25 oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS -40 0 010 15 20 25 5 VGS (V) -10 -20 -30 -50 -60 -70 LET = 37MeV/mg/cm2, RANGE = 36 µ LET = 26MeV/mg/cm2, RANGE = 43 µ FLUENCE = 1E5 IONS/cm2 (TYPICAL) TEMP = 25oC -300 -100 -10 DRAIN SUPPLY (V) -1000 ILM = 10A 300A 1E-4 1E-5 1E-6 -30 100A 30A 1E-7 1E-3 FSTYC9055D, FSTYC9055R |
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