2SD1624-S datasheet(1/3 Pages) KEXIN

No. de pieza	2SD1624-S

Descripción Electrónicos	NPN Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SD1624

■

Features

●

Low collector-to-emitter saturation voltage.

●

Large current capacity and wide ASO.

●

Fast switching speed.

●

Complementary to 2SB1124

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

50

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

3

Collector Current - Pulse

ICP

6

Collector Power Dissipation

0.5

(Note.1)

1.5

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1:Mounted on ceramic board (250mm ×0.8mm)

2

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 uA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，RBE= ∞

50

Emitter - base breakdown voltage

VEBO

IE= 100 uA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

1

Collector-emitter saturation voltage

VCE(sat) IC=2 A, IB=100 mA

0.19

0.5

Base - emitter saturation voltage

VBE(sat) IC=2 A, IB=100 mA

1.2

VCE= 2V, IC= 100 mA

100

560

VCE= 2V, IC= 3 A

35

Turn-ON Time

ton

70

Storage Time

tstg

650

Fall Time

tf

35

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

25

pF

Transition frequency

fT

VCE= 10V, IC= 50mA

150

MHz

See specified Test Circuit.

ns

V

uA

DC current gain

hFE

V

■

Classification of hfe(1)

Type

2SD1624-R

2SD1624-S

2SD1624-T

2SD1624-U

Range

100-200

140-280

200-400

280-560

Marking

DG R*

DG S*

DG T*

DG U*

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2SD1624-S Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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