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BC856BS Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza BC856BS
Descripción Electrónicos  PNP Transistors
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BC856BS Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

  BC856BS_15 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd BC856BS_15 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd BC856BS_15 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd BC856BS_15 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd BC856BS_15 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
4
Transistors
.
PNP Transistors
BC856BS (KC856BS)
Typical Characterisitics
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Tamb = 25 °C
Fig 3.
Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
VCE = −5 V; Tamb = 25 °
I
C
C/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5.
Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
200
400
600
hFE
0
IC (mA)
10−2
103
102
10−1
10
1
(1)
(2)
(3)
VCE (V)
0
10
8
4
6
2
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
0.25
IB (mA) = −2.5
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
10−1
103
102
1
10
IC (mA)
10−1
103
102
1
10
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)


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