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CS48N18 Datasheet(PDF) 2 Page - Thinki Semiconductor Co., Ltd.

No. de pieza CS48N18
Descripción Electrónicos  70V,158A N-Channel Trench Process Power MOSFET
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Fabricante Electrónico  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Página de inicio  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

CS48N18 Datasheet(HTML) 2 Page - Thinki Semiconductor Co., Ltd.

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Table 2.
Thermal Characteristic
Symbol
Parameter
Value
Unit
RJC
Thermal Resistance,Junction-to-Case
0.65
/W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BVDSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
70
V
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=68V,VGS=0V
1
μA
IDSS
Zero Gate Voltage Drain Current(Tc=125℃)
VDS=68V,VGS=0V
1
μA
IGSS
Gate-Body Leakage Current
VGS=±25V,VDS=0V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
2
4
V
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=40A
3.5
4.2
Dynamic Characteristics
gFS
Forward Transconductance
VDS=10V,ID=40A
22
S
Ciss
Input Capacitance
6448
pF
Coss
Output Capacitance
967
pF
Crss
Reverse Transfer Capacitance
VDS=25V,VGS=0V,
f=1.0MHz
492
pF
Qg
Total Gate Charge
150
nC
Qgs
Gate-Source Charge
28
nC
Qgd
Gate-Drain Charge
VDS=30V,ID=30A,
VGS=10V
40
nC
Switching Times
td(on)
Turn-on Delay Time
24
nS
tr
Turn-on Rise Time
28
nS
td(off)
Turn-Off Delay Time
50
nS
tf
Turn-Off Fall Time
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
60
nS
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
175
A
ISDM
Pulsed Source-Drain Current(Body Diode)
700
A
VSD
Forward on Voltage
(Note 1)
TJ=25℃,ISD=40A,VGS=0V
0.8
0.95
V
trr
Reverse Recovery Time
(Note 1)
90
nS
Qrr
Reverse Recovery Charge
(Note 1)
TJ=25℃,IF=75A
di/dt=100A/μs
180
nC
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 2/5
Rev.05
®
CS48N18


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