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2SA1257-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1257-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type Transistors 1 www.kexin.com.cn Features High breakdown voltage. Small output capacitance. Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -180 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -160 V V e g a tl o v e s a b -r e tt i m E EBO -5 V I t n e rr u c r o t c e ll o C C -80 mA I ) e s l u p ( t n e rr u c r o t c e ll o C CP -150 mA P n o it a p i s s i d r o t c e ll o C C 200 mW T e r u t a r e p m e t n o it c m u J j 125 T e r u t a r e p m e t e g a r o t S stg -55 to +125 PNP Transistors 2SA1257 ● Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -180 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -160 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-30mA, IB=- 3mA -0.7 Base - emitter saturation voltage VBE(sat) IC=-30mA, IB=- 3mA -1.2 Base - emitter voltage VBE VCE= -5V , IC=-10mA -1.5 DC current gain hFE VCE= -5V, IC= -10mA 60 270 Turn-on time ton 0.15 Storage time tstg 0.95 Fall time tf 0.15 Collector output capacitance Cob VCB= -10V, f-1MHz 2.4 3.2 pF Transition frequency fT VCE= -10V, IC= -10mA 130 MHz See Test Circuit. V V us nA ■ Classification of hfe 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 Type 2SA1257-G3 2SA1257-G4 2SA1257-G5 Range 60-120 90-180 135-270 Marking G3 G4 G5 |
Número de pieza similar - 2SA1257-3_15 |
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Descripción similar - 2SA1257-3_15 |
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