3-218

HFA1145/883

Die Characteristics

DIE DIMENSIONS:

59 x 58.2 x 19 mils

± 1 mils

1500 x 1480 x 483

µm ± 25.4µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW

Type: Metal 2: AICu(2%)

Thickness: Metal 1: 8k

Å

Thickness: Metal 2: 16k

Å

GLASSIVATION:

Type: Nitride

Thickness: 4k

Å

SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)

WORST CASE CURRENT DENSITY: TBD

TRANSISTOR COUNT: 75

Metallization Mask Layout

HFA1145/883

V-

OPTIONAL

OUT

+IN

-IN

V+

GND (NOTE)

NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility

of the DIS input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V).

Spec Number

511116-883

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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

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