IRF7805Z datasheet(1/6 Pages) KEXIN

No. de pieza	IRF7805Z

Descripción Electrónicos	N-Channel Enhancement MOSFET

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

■

Features

●

VDS (V) = 30V

●

ID = 16 A (VGS = 10V)

●

RDS(ON) ＜ 6.8mΩ (VGS = 10V)

8

1

2

3

4

5

6

7

D

G

S

A

S

A

■

Absolute Maximum Ratings Ta = 25℃

N-Channel Enhancement MOSFET

●

HEXFET Power MOSFET

Symbol

Rating

Unit

VDS

30

VGS

±20

TA=25℃

16

TA=70℃

12

IDM

120

IAR

12

EAS

72

mJ

TA=25℃

2.5

TA=70℃

1.6

RthJA

50

RthJC

20

TJ

150

Tstg

-55 to 150

Single Pulse Avalanche Energy

Avalanche Current

V

A

Pulsed Drain Current

Parameter

Continuous Drain Current

ID

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

PD

W

Power Dissipation

℃

/W

℃

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

IRF7805Z (KRF7805Z)

SOP-8

1.50 0.15

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IRF7805Z Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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