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2SK2094-Z Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SK2094-Z
Descripción Electrónicos  N-Channel MOSFET
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2094-Z Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel MOSFET
2SK2094-Z
Features
VDS (V) = 60V
ID = 2A
RDS(ON) < 0.35Ω (VGS = 10V)
RDS(ON) < 0.5Ω (VGS = 4V)
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±
20
Continuous Drain Current
ID
2
Pulsed Drain Current
(Note.1)
IDM
8
Power Dissipation
PD
20
W
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
A
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=1 mA, VGS=0V
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
100
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=10V ID=1mA
1
2.5
V
VGS=10V, ID=1A
0.35
VGS=4V, ID=1A
0.5
Forward Transconductance
gFS
VDS=10V, ID=1A
1
S
Input Capacitance
Ciss
400
Output Capacitance
Coss
150
Reverse Transfer Capacitance
Crss
50
Turn-On DelayTime
td(on)
10
Turn-On Rise Time
tr
20
Turn-Off DelayTime
td(off)
100
Turn-Off Fall Time
tf
40
Body Diode Reverse Recovery Time
trr
IF= 2A,VGS=0, dI/dt= 100A/μs
100
pF
Static Drain-Source On-Resistance
RDS(On)
Ω
VGS=10V, VDS=30V, ID=1A,
RL=30Ω,RG=10Ω
VGS=0V, VDS=10V, f=1MHz
ns


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