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2SJ506S Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SJ506S
Descripción Electrónicos  P-Channel MOSFET
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SJ506S Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
P-Channel MOSFET
2SJ506S
Features
VDS (V) =-30V
ID =-10 A
RDS(ON) < 85mΩ (VGS =-10V)
RDS(ON) < 180Ω (VGS =-4V)
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±
20
Continuous Drain Current
ID
-10
Pulsed Drain Current (Note.1)
IDM
-40
Body to Drain Diode Reverse Drain Current
IDR
-10
Power Dissipation
PD
20
W
Junction Temperature
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
V
A
Note.1: PW ≤ 10 us, duty cycle ≤ 1%
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-10mA, VGS=0V
-30
Gate-Source Breakdown Voltage
VGSS
IG=±100uA, VDS=0V
±20
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-10
uA
Gate-Body leakage current
IGSS
VDS=0V, VGS=±16V
±
10
uA
Gate to Source Cutoff Voltage
VGS(off)
VGS=-10V ID=-1mA
-1
-2
V
VGS=-10V, ID=-5A
85
VGS=-4V, ID=-5A
180
Forward Transconductance
gFS
VDS=-10V, ID=-5A
10
16
S
Input Capacitance
Ciss
660
Output Capacitance
Coss
440
Reverse Transfer Capacitance
Crss
140
Turn-On DelayTime
td(on)
12
Turn-On Rise Time
tr
65
Turn-Off DelayTime
td(off)
85
Turn-Off Fall Time
tf
65
Body Diode Reverse Recovery Time
trr
IF=-10A, dI/dt=50A/μs,VGS=0
65
Diode Forward Voltage
VSD
IS=-10A,VGS=0V
-1.05
V
ns
VGS=-10V, ID=-5A, RL=2Ω
VGS=0V, VDS=-10V, f=1MHz
V
Static Drain-Source On-Resistance
RDS(On)
pF
D
G
S
2.3
0.60+ 0.1
- 0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4 .60 +0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.127
max
TO-252
Unit: mm
4
1 Gate
2 Drain
3 Source
4 Drain


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