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IRF620 Datasheet(PDF) 2 Page - Intersil Corporation

No. de pieza IRF620
Descripción Electrónicos  5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
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Fabricante Electrónico  INTERSIL [Intersil Corporation]
Página de inicio  http://www.intersil.com/cda/home
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IRF620 Datasheet(HTML) 2 Page - Intersil Corporation

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4-197
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF620
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.0
3.0
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
40
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
85
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA, (Figure 10)
200
-
-
V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
5.0
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 2.5A, (Figures 8, 9)
-
0.8
1.2
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A (Figure 12)
1.3
2.5
-
S
Turn-On Delay Time
td(ON)
VDD = 100V, ID ≈ 5.0A, RG = 9.1Ω, RL = 20Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-20
40
ns
Rise Time
tr
-30
60
ns
Turn-Off Delay Time
td(OFF)
-
50
100
ns
Fall Time
tf
-30
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 5.0A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-11
15
nC
Gate to Source Charge
Qgs
-
5.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
6.0
-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
-
450
-
pF
Output Capacitance
COSS
-
150
-
pF
Reverse Transfer Capacitance
CRSS
-40-
pF
Internal Drain Inductance
LD
Measured from the Contact
Screw on Tab to Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
3.12
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
62.5
oC/W
LS
LD
G
D
S
IRF620


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