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IRF620 Datasheet(PDF) 2 Page - Intersil Corporation |
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IRF620 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 4-197 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF620 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 5.0 3.0 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 20 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 40 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 85 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 10) 200 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 5.0 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 2.5A, (Figures 8, 9) - 0.8 1.2 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A (Figure 12) 1.3 2.5 - S Turn-On Delay Time td(ON) VDD = 100V, ID ≈ 5.0A, RG = 9.1Ω, RL = 20Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature -20 40 ns Rise Time tr -30 60 ns Turn-Off Delay Time td(OFF) - 50 100 ns Fall Time tf -30 60 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.0A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figure 14) Gate Charge is Essentially Independent of Operating Temperature -11 15 nC Gate to Source Charge Qgs - 5.0 - nC Gate to Drain “Miller” Charge Qgd - 6.0 - nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 450 - pF Output Capacitance COSS - 150 - pF Reverse Transfer Capacitance CRSS -40- pF Internal Drain Inductance LD Measured from the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 3.5 - nH Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die - 4.5 - nH Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 3.12 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 62.5 oC/W LS LD G D S IRF620 |
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